Name: AORUS NVMe Gen4 SSD
Brand: AORUS
SKU: 9501
Availability: OutOfStock

AORUS NVMe Gen4 SSD

2,100.0EGP – 4,000.0EGP

SKU: N/A Category: SSD

Description

World First PCIe 4.0×4 Controller

The World First PCIe 4.0×4 Controller, Phison PS5016-E16 controller, made by 28nm manufacturing technology. The advanced fabrication process ensures PS5016-E16 has enough compute power for ECC processing when adopting the latest 3D TLC NAND flash. PS5016-E16 also features eight NAND channels with 32 CE targets, DDR4 DRAM caching, and a PCIe 4.0×4 interface. As for features, the chip supports the NVMe 1.3 protocol, LDPC error correction, and Wear Leveling, Over-Provision technologies to improve reliability and durability of SSDs.

PCIe 4.0×4, NVMe 1.3 Interface
DDR4 DRAM cache
8 CH with 32 CEs
Phison 4th Gen LDPC & RAID ECC
Support Pyrite
Heat spreader for controller

NAND Flash Selected for High Quality and Performance

TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s)
Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0×4 devices for superior storage performance.

Composition

Dimension

معلومات إضافية

Brand	AORUS
storage	1TB, 2TB, 500GB

Specs

Interface

PCI-Express 4.0x4, NVMe 1.3
Form Factor

M.2 2280
Total Capacity

500GB
Warranty

Limited 5-years or 850TBW
NAND

3D TLC Toshiba BiCS4
External DDR Cache

DDR4 512MB
Sequential Read speed

Up to 5000 MB/s
Sequential Write speed

Up to 2500 MB/s
Random Read IOPS

up to 400k
Random Write IOPS

up to 550k
Dimension

80.5 x 11.25 x 23.5 mm
Mean time between failure (MTBF)

1.77 million hours
Power Consumption (Active)

Average: R : 5.9W; W : 4.5W
Power Consumption (Idle)

13.21mW
Temperature (Operating)

0°C to 70°C
Temperature (Storage)

-40°C to 85°C
Note

* Test system configuration: configuration may vary by models, we will choose the latest platform for verification. * Performance may vary based on SSD's firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark v.5.1.2 and I0meter 1.1.0. * Speeds based on internal testing. Actual performance may vary. * TBW (Terabyte Written):Terabytes Written" is the total amount of data that can be written into an SSD before it is likely to fail. * 1GB = 1 billion bytes. Actual useable capacity may vary. * 5 years or 850TBW, whichever comes first. * TBW is evaluated by JEDEC workload standard.

AORUS NVMe Gen4 SSD

World First PCIe 4.0×4 Controller

NAND Flash Selected for High Quality and Performance

TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s)
Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0×4 devices for superior storage performance.

Composition

Dimension

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AORUS NVMe Gen4 SSD

World First PCIe 4.0×4 Controller

NAND Flash Selected for High Quality and Performance

TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s) Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0×4 devices for superior storage performance.

Composition

Dimension

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Up to 3300MB/s read, 3000MB/s write speeds

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AORUS NVMe Gen4 SSD

TOSHIBA BiCS4 96 Layers 3D TLC (800MT/s)
Toshiba BiCS4 NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS NVMe Gen 4 SSD far exceeds that of PCIe 3.0×4 devices for superior storage performance.